As part of ongoing face-to-face engagement between the F450C and G450C, members of both consortia gathered recently at M+W Group’s headquarters at the State University of New York Polytechnic Institute’s College of Nanoscale Science & Engineering (CNSE), nestled in the emerging technology hub in upstate New York, to discuss the status of facilities infrastructure projects […]
While the F450C addresses many of the larger infrastructure challenges in the transition to 450mm wafer sizes, water treatment systems are affected only minimally. Still, it’s important to consider the impact of this transition, as water treatment is critical to the wafer fabrication processes, especially as we’re simultaneously scaling to smaller nodes. Per wafer, although […]
Members of the F450 Consortium, along with G450C management, met in mid-November at the beautiful new M+W Group office space in the Zen building at Albany’s SUNY Poly CNSE campus. Nearly all of the F450C member companies were in attendance and served as an opportunity to showcase the fine work being done by our member […]
Last Tuesday at SEMICON West, the Facilities 450mm Consortium hosted a panel of representatives from F450C and G450C member companies to provide an update on fab facilities and infrastructure progress in preparing for the transition from 300mm substrates to 450mm. As the F450C Program Manager, I was honored to moderate the panel which included David […]
In transitioning from 300mm to 450mm wafer processing, the surface area of each wafer approximately doubles and so the mass of direct materials used in deposition and etch chambers can be expected to increase accordingly. Consequently, the cost to deliver and abate process chemicals will likewise double…unless we re-examine how our process tools are integrated […]
Ben Peek began his career as a research chemist with Texas Instruments, R&D Labs, in the 1960s. His interest was surface chemistry (flat surfaces) and basic research in exotic semiconductor materials such as gallium arsenide (GaAs), germanium, indium phosphide (InP), indium antimonide (InSb), and mercury cadmium telluride (HgCdTe). These materials are today’s mainstays for speed […]
For at least the last 30 years, minimum features of devices have decreased, and the cost per transistor has also decreased. Several IC makers have indicated that below the 20nm node, the cost per transistor is now anticipated to increase. Certainly, one driver of 450mm wafer transition is the anticipated decline in the cost to […]